View NPT2022_9025330.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

gan wideband transistor 48 v, 100 w dc - 2 ghz rev. v1 NPT2022 1 1 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 1 * restrictions on hazardous substances, european union directive 2011/65/eu. ordering information part number package NPT2022 bulk quantity NPT2022 - smbppr sample board features ? gan on si hemt d - mode transistor ? suitable for linear and saturated applications ? tunable from dc - 2 ghz ? 48 v operation ? 20 db gain @ 900 mhz ? 60 % drain efficiency @ 900 mhz ? 100 % rf tested ? standard plastic package with bolt down flange ? rohs* compliant and 260c reflow compatible description the NPT2022 gan hemt is a wideband transistor optimized for dc - 2 ghz operation. this device supports cw, pulsed, and linear operation with output power levels to 100 w (50 dbm) in an industry standard plastic package. the NPT2022 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ism applications and vhf/ uhf/l/s - band radar. built using the sigantic? process - a proprietary gan - on - silicon technology. pin configuration functional schematic pin no. pin name function 1 rf in / v g rf input / gate 2 rf out / v d rf output / drain 3 pad 1 ground / source 1. the exposed pad centered on the package bottom must be connected to rf and dc ground. this path must also provide a low thermal resistance heat path. 1 3 2
gan wideband transistor 48 v, 100 w dc - 2 ghz rev. v1 NPT2022 2 2 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 2 rf electrical specifications: t c = 25 ? ds = 48 v, i dq = 600 ma parameter test conditions symbol min. typ. max. units small signal gain cw, 900 mhz g ss - 21 - db saturated output power cw, 900 mhz p sat - 50.5 - dbm drain efficiency at saturation cw, 900 mhz ? sat - 62 - % power gain 900 mhz, p out = 100 w g p 19 20 - db drain efficiency 900 mhz, p out = 100 w ? 56 58 - % ruggedness: output mismatch all phase angles ? vswr = 10 :1, no device damage dc electrical characteristics: t c = 25 ? parameter test conditions symbol min. typ. max. units drain - source leakage current v gs = - 8 v, v ds = 160 v i dlk - - 24 ma gate - source leakage current v gs = - 8 v, v ds = 0 v i glk - - 12 ma gate threshold voltage v ds = 48 v, i d = 24 ma v t - 2.5 - 1.6 - 0.5 v gate quiescent voltage v ds = 48 v, i d = 600 ma v gsq - 2.1 - 1.4 - 0.3 v on resistance v ds = 2 v, i d = 180 ma r on - 0.2 - ? maximum drain current v ds = 7 v pulsed, pulse width 300 s i d,max - 14 - a
gan wideband transistor 48 v, 100 w dc - 2 ghz rev. v1 NPT2022 3 3 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 3 absolute maximum ratings 2,3,4 2. exceeding any one or combination of these limits may cause permanent damage to this device. 3. macom does not recommend sustained operation near these survivability limits. 4. operating at nominal conditions with t j 200c will ensure mttf > 1 x 10 6 hours. parameter absolute maximum drain source voltage, v ds 160 v gate source voltage, v gs - 10 to 3 v gate current, i g 48 ma junction temperature, t j + 200 c operating temperature - 4 0 c to +85 c storage temperature - 65 c to +150c 5. junction temperature (t j ) measured using ir microscopy. case temperature measured using thermocouple embedded in heat - sink. parameter test conditions symbol typical units thermal resistance v ds = 48 v, t j = 200c r ? jc 1.3 c/w thermal characteristics 5 handling procedures please observe the following precautions to avoid damage: static sensitivity gallium nitride circuits are sensitive to electrostatic discharge (esd) and can be damaged by static electricity. proper esd control techniques should be used when handling these hbm class 1b devices.
gan wideband transistor 48 v, 100 w dc - 2 ghz rev. v1 NPT2022 4 4 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 4 frequency (mhz) z s ( ? z l ( ? p sat (w) g ss (db) drain efficiency @ p sat (%) 500 1.3 + j0.8 5.8 + j2.5 152 26 71 900 1.1 - j1.3 5.0 + j2.8 139 22 70 1800 1.3 - j5.7 3.2 - j1.4 133 17 66 2000 1.4 - j6.3 2.3 - j2.3 119 16 66 load - pull performance: v ds = 48 v, i dq = 600 ma, t c = 25c reference plane at device leads, cw drain efficiency and output power tradeoff impedance gain vs. output power drain efficiency vs. output power impedance reference z s and z l vs. frequency z s z l 14 16 18 20 22 24 26 28 25 30 35 40 45 50 55 500 mhz 900 mhz 1800 mhz 2000 mhz gain (db) output power (dbm) 0 10 20 30 40 50 60 70 80 25 30 35 40 45 50 55 500 mhz 900 mhz 1800 mhz 2000 mhz drain efficiency (%) output power (dbm)
gan wideband transistor 48 v, 100 w dc - 2 ghz rev. v1 NPT2022 5 5 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 5 parts measured on evaluation board (30 - mil thick ro4350). matching is provided using a combination of lumped elements and transmission lines as shown in the simplified schematic above. recommended tuning solution component placement, transmission lines, and details are shown on the next page. evaluation board and recommended tuning solution 900 mhz narrowband circuit description turning the device on 1. set v gs to the pinch - off (v p ), typically - 5 v. 2. turn on v ds to nominal voltage (48 v). 3. increase v gs until the i ds current is reached. 4. apply rf power to desired level. turning the device off 1. turn the rf power off. 2. decrease v gs down to v p. 3. decrease v ds down to 0 v. 4. turn off v gs . bias sequencing c 12 6 . 8 pf rf in c 4 1000 pf c 3 0 . 01 m m 1 . 0 m v gs v ds c 13 18 pf rf out c 10 33 pf npt 2022 c 5 1 . 0 m m m 1000 pf c 11 15 pf l 2 44 nh l 1 19 . 4 nh r 1 10 ? c 15 8 . 2 pf c 14 0 . 8 pf c 9 10 pf
gan wideband transistor 48 v, 100 w dc - 2 ghz rev. v1 NPT2022 6 6 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 6 reference value tolerance manufacturer part number c1, c5 1.0 f 10% avx 12101c105kat2a c2, c6 0.1 f 10% kemet c1206c104k1ractu c3, c7 0.01 f 10% avx 12061c103kat2a c4, c8 1000 pf 10% kemet c0805c102k1ractu c9 10 pf 5% atc atc800b100j c10 33 pf 10% atc atc800b330k c11 15 pf 10% atc atc800b150k c12 6.8 pf 0.1 pf atc atc800b6r8b c13 18 pf 10% atc atc800b180k c14 0.8 pf 0.1 pf atc atc800b0r8b c15 8.2 pf 0.1 pf atc atc800b8r2b r1 10 ? 1% panasonic erj - 2rkf10r0x l1 19.4 nh 5% coilcraft 0806sq - 19njlb l2 ~44 nh 10% 20 awg cu wire 4 turn, 5mm id pcb rogers ro4350, ? r =3.5, 30 mil parts list evaluation board and recommended tuning solution 900 mhz narrowband circuit
gan wideband transistor 48 v, 100 w dc - 2 ghz rev. v1 NPT2022 7 7 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 7 typical performance as measured in the 900 mhz evaluation board: cw, v ds = 48 v, i dq = 600 ma (unless noted) gain vs. output power over temperature drain efficiency vs. output power over temperature quiescent v gs vs. temperature 18.0 18.5 19.0 19.5 20.0 20.5 21.0 21.5 22.0 30 35 40 45 50 55 +25c -40c +85c gain (db) output power (dbm) 0 10 20 30 40 50 60 70 30 35 40 45 50 55 +25c -40c +85c drain efficiency (%) output power (dbm) -1.55 -1.50 -1.45 -1.40 -1.35 -1.30 -1.25 -1.20 -50 -25 0 25 50 75 100 300 ma 600 ma 900 ma v gsq (v) temperature (c)
gan wideband transistor 48 v, 100 w dc - 2 ghz rev. v1 NPT2022 8 8 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 8 2 - tone imd vs. output power 2 - tone imd3 vs. output power vs. quiescent current 2 - tone gain vs. output power vs. quiescent current typical 2 - tone performance as measured in the 900 mhz evaluation board: 1 mhz tone spacing, v ds = 48 v, i dq = 600 ma, t c = 25c (unless noted) -50 -45 -40 -35 -30 -25 -20 -15 1 10 100 450ma 600ma 750ma 900ma 1050ma imd (dbc) p out (w-pep) -55 -50 -45 -40 -35 -30 -25 -20 -15 1 10 100 -imd3 +imd3 -imd5 +imd5 -imd7 +imd7 imd (dbc) p out (w-pep) 500 19.5 20.0 20.5 21.0 21.5 22.0 22.5 1 10 100 450ma 600ma 750ma 900ma 1050ma gain (db) p out (w-pep) 500
gan wideband transistor 48 v, 100 w dc - 2 ghz rev. v1 NPT2022 9 9 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 9 evaluation board and recommended tuning solution 130 - 940 mhz broadband circuit reference value tolerance manufacturer part number c1 150 f 20% nichicon upw1c151med c2, c7 1.0 f 10% avx 1210c105kat2a c3, c6 0.1 f 10% kemet c1206c104k1ractu c4, c5 0.01 f 10% avx 12061c103kat2a c8 270 f 20% united chemi - con elxy 630ell271mk25s c9 18 pf 5% atc atc100b180j c10 1000 pf 5% atc atc100b102j c11 1.5 pf 0.1 pf atc atc100b1r5b c12 5.6 pf 0.1 pf atc atc100b5r6b c13 15 pf 5% atc atc100b150j c14 220 pf 5% atc atc600f221j c15 12 pf 2% atc atc600f120f c16, c17 82 pf 10% atc atc100b820k c18 4.7 pf 0.1 pf atc atc100b4r7b c19 2.4 pf 0.1 pf atc atc100b2r4b c20 3.9 pf 0.1 pf atc atc100b3r9b c21 1.0 pf 0.1 pf atc atc100b1r0b r1 49.9 ? 1% panasonic erj - 6enf49r9v r2 470 ? 1% panasonic erj - 1tnf4700u r3 0.33 ? 1% panasonic erj - 6rqfr33v r4, r5 24.9 ? 1% panasonic erj - 1tnf24r9u f1 material 73 - fair - rite 2673000801 f2, f3 4:1 transformer - anaren xmt031b5012 l1 25 nh 5% coilcraft 0908sq - 25njl l2, l4 8.0 nh 5% coilcraft a03tjl l3, l5 5.0 nh 5% coilcraft a02tjl pcb rogers ro4350, ? r =3.5, 30 mil parts list
gan wideband transistor 48 v, 100 w dc - 2 ghz rev. v1 NPT2022 10 10 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 10 evaluation board and recommended tuning solution 130 - 940 mhz broadband circuit performance vs. frequency at p out = p sat performance vs. frequency at p out = 49 dbm performance vs. output power (f = 760 mhz) small signal s - parameters vs. frequency r 1 49 . 9 ? c 4 0 . 01 m m c 2 1 . 0 m v gs v ds rf out c 9 18 pf npt 2022 c 7 1 . 0 m c 6 0 . 1 m m m 0 . 33 ? c 1 150 m r 4 24 . 9 ? ? rf in f 3 4 : 1 f 2 4 : 1 c 14 220 pf f 1 c 10 1000 pf r 2 470 ? l 2 8 nh c 20 3 . 9 pf c 19 2 . 4 pf c 21 1 . 0 pf 5 10 15 20 25 30 35 -30 -25 -20 -15 -10 -5 0 0 200 400 600 800 1,000 s21 s11 s22 magnitude s 21 (db) magnitude s 11 , s 22 (db) frequency (mhz) 5 10 15 20 25 30 40 45 50 55 60 65 0 200 400 600 800 1,000 gain drain eff gain (db) drain efficiency (%) frequency (mhz) 11.5 12.0 12.5 13.0 13.5 14.0 14.5 0 10 20 30 40 50 60 25 30 35 40 45 50 55 gain drain eff gain (db) drain efficiency (%) p out (dbm) 5 10 15 20 25 30 45 50 55 60 65 70 0 200 400 600 800 1,000 gain drain eff psat gain (db) p sat (dbm), drain efficiency (%) frequency (mhz)
gan wideband transistor 48 v, 100 w dc - 2 ghz rev. v1 NPT2022 11 11 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 11 to272 - 2 plastic package ? ? meets jedec moisture sensitivity level 3 requirements. plating is matte sn. all dimensions shown as inches [millimeters].

▲Up To Search▲

Price & Availability of NPT2022

	To Download NPT2022 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .